Bestirpower · FETs & Power MOSFETs · MPN BMD65N380E2
No reviews yet — be the first to review Bestirpower BMD65N380E2.
| Gate Charge(Qg) | 19nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 10.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 114W |
| RDS(on) | 380mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 3.8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 801pF |
| Type | N-Channel |
650V 10.5A 3V 114W 380mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS