Bestirpower BMD65N380C1

Bestirpower · FETs & Power MOSFETs · MPN BMD65N380C1

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Specifications

Output Capacitance(Coss)33pF
Pd - Power Dissipation104.2W
Configuration-
Gate Charge(Qg)23.5nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)10.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)1.4pF
RDS(on)340mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)630pF

Technical details

104.2W 650V 10.5A 3V 340mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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