Bestirpower BMD60N600C1

Bestirpower · FETs & Power MOSFETs · MPN BMD60N600C1

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)23pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)1.3pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)370pF
TypeN-Channel

Technical details

N-Channel 600V 8A 62.5W Surface Mount DPAK

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