Bestirpower BMB65N380E1

Bestirpower · FETs & Power MOSFETs · MPN BMB65N380E1

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Specifications

Drain to Source Voltage650V
Configuration-
Gate Charge(Qg)16.5nC@10V
Current - Continuous Drain(Id)9.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation87W
Reverse Transfer Capacitance (Crss@Vds)224pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)624pF
TypeN-Channel

Technical details

N-Channel 650V 9.6A 87W Surface Mount TO-263-2L

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