Bestirpower · FETs & Power MOSFETs · MPN BMB65N100UC1
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| Gate Charge(Qg) | 66nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 278W |
| RDS(on) | 100mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.99nF |
| Type | N-Channel |
650V 35A 4V 278W 100mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS