Bestirpower · FETs & Power MOSFETs · MPN BMB65N046UE1
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| Gate Charge(Qg) | 138nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 76A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 500W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF |
| RDS(on) | 46mΩ@10V |
| Input Capacitance(Ciss) | 5.233nF |
| Type | N-Channel |
650V 76A 3V 500W 46mΩ@10V N-Channel D2PAK Single FETs, MOSFETs RoHS