Bestirpower BCZ75N11W1

Bestirpower · FETs & Power MOSFETs · MPN BCZ75N11W1

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Specifications

Drain to Source Voltage750V
Gate Charge(Qg)222nC
Current - Continuous Drain(Id)165A
Output Capacitance(Coss)413pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.75V
Pd - Power Dissipation833W
RDS(on)11mΩ
Reverse Transfer Capacitance (Crss@Vds)19.5pF
Number1 N-channel
Input Capacitance(Ciss)5.546nF
TypeN-Channel

Technical details

750V 165A 2.75V 833W 11mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS

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