Bestirpower BCZ65N65W1

Bestirpower · FETs & Power MOSFETs · MPN BCZ65N65W1

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)42nC
Current - Continuous Drain(Id)42A
Output Capacitance(Coss)70pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation174W
RDS(on)65mΩ
Reverse Transfer Capacitance (Crss@Vds)6.4pF
Number1 N-channel
Input Capacitance(Ciss)914pF
TypeN-Channel

Technical details

650V 42A 3V 174W 65mΩ 1 N-channel N-Channel TO247-4 Single FETs, MOSFETs RoHS

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