Bestirpower BCZ65N27M1

Bestirpower · FETs & Power MOSFETs · MPN BCZ65N27M1

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Specifications

Gate Charge(Qg)91nC
Drain to Source Voltage650V
Output Capacitance(Coss)207pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation273W
RDS(on)27mΩ
Reverse Transfer Capacitance (Crss@Vds)10.5pF
Input Capacitance(Ciss)1.853nF
TypeN-Channel

Technical details

650V 75A 2.8V 273W 27mΩ N-Channel TO-247-4L Single FETs, MOSFETs RoHS

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