Bestirpower BCZ65N25W1

Bestirpower · FETs & Power MOSFETs · MPN BCZ65N25W1

No reviews yet — be the first to review Bestirpower BCZ65N25W1.

Specifications

Drain to Source Voltage650V
Gate Charge(Qg)70nC
Output Capacitance(Coss)118pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation-
RDS(on)25mΩ
Reverse Transfer Capacitance (Crss@Vds)11.6pF
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

650V 60A 3.4V 25mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs