Bestirpower BCZ120N40M1

Bestirpower · FETs & Power MOSFETs · MPN BCZ120N40M1

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Specifications

Gate Charge(Qg)109nC
Configuration-
Drain to Source Voltage1.2kV
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)40mΩ
Number1 N-channel
Input Capacitance(Ciss)1.96nF

Technical details

N-Channel 1.2kV 60A 375W Through Hole TO-247-4L

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