Bestirpower BCZ120N32W1

Bestirpower · FETs & Power MOSFETs · MPN BCZ120N32W1

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Specifications

Gate Charge(Qg)121nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)111pF
Current - Continuous Drain(Id)69A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.9V
Pd - Power Dissipation348W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)32mΩ
Number1 N-channel
Input Capacitance(Ciss)2.812nF
TypeN-Channel

Technical details

N-Channel 1.2kV 69A 348W Through Hole TO-247-4

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