Bestirpower BCZ120N21M1

Bestirpower · FETs & Power MOSFETs · MPN BCZ120N21M1

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Specifications

Gate Charge(Qg)198nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)224pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation469W
RDS(on)21mΩ
Reverse Transfer Capacitance (Crss@Vds)17pF
Number1 N-channel
Input Capacitance(Ciss)3.741nF
TypeN-Channel

Technical details

N-Channel 1.2kV 100A 469W Through Hole TO-247-4

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