Bestirpower BCZ120N16M1

Bestirpower · FETs & Power MOSFETs · MPN BCZ120N16M1

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Specifications

Configuration-
Gate Charge(Qg)70.5nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)255pF
Current - Continuous Drain(Id)164A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation760W
Reverse Transfer Capacitance (Crss@Vds)9.3pF
RDS(on)16mΩ
Number1 N-channel
Input Capacitance(Ciss)6.413nF

Technical details

1.2kV 164A 2.8V 760W 16mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS

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