Bestirpower BCW65N45M1

Bestirpower · FETs & Power MOSFETs · MPN BCW65N45M1

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Specifications

Gate Charge(Qg)56nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)42A
Output Capacitance(Coss)131pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation150W
RDS(on)45mΩ
Reverse Transfer Capacitance (Crss@Vds)9.1pF
Number1 N-channel
Input Capacitance(Ciss)1.048nF
TypeN-Channel

Technical details

N-Channel 650V 42A 150W Through Hole TO-247

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