Bestirpower BCW120N60M2

Bestirpower · FETs & Power MOSFETs · MPN BCW120N60M2

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)97.3nC
Current - Continuous Drain(Id)57A
Output Capacitance(Coss)89pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation306W
RDS(on)60mΩ
Reverse Transfer Capacitance (Crss@Vds)2pF
Number1 N-channel
Input Capacitance(Ciss)2.236nF
TypeN-Channel

Technical details

1.2kV 57A 2.6V 306W 60mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS

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