Bestirpower BCW120N21M1

Bestirpower · FETs & Power MOSFETs · MPN BCW120N21M1

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Specifications

Gate Charge(Qg)198nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)224pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation469W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)21mΩ
Number1 N-channel
Input Capacitance(Ciss)3.741nF
TypeN-Channel

Technical details

1.2kV 100A 3V 469W 21mΩ 1 N-channel N-Channel TO-247-3L Single FETs, MOSFETs RoHS

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