Bestirpower BCT65N45M1

Bestirpower · FETs & Power MOSFETs · MPN BCT65N45M1

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Specifications

Gate Charge(Qg)56nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)44A
Output Capacitance(Coss)131pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation150W
RDS(on)45mΩ
Reverse Transfer Capacitance (Crss@Vds)9.1pF
Number1 N-channel
Input Capacitance(Ciss)1.048nF
TypeN-Channel

Technical details

650V 44A 2.8V 150W 45mΩ 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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