Bestirpower BCT65N27M1

Bestirpower · FETs & Power MOSFETs · MPN BCT65N27M1

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Specifications

Gate Charge(Qg)91nC
Drain to Source Voltage650V
Output Capacitance(Coss)207pF
Current - Continuous Drain(Id)84A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation349W
RDS(on)27mΩ
Reverse Transfer Capacitance (Crss@Vds)10.5pF
Number1 N-channel
Input Capacitance(Ciss)1.853nF
TypeN-Channel

Technical details

650V 84A 2.8V 349W 27mΩ 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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