Bestirpower BCT65N15M1

Bestirpower · FETs & Power MOSFETs · MPN BCT65N15M1

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)146nC
Output Capacitance(Coss)297pF
Current - Continuous Drain(Id)134A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation500W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)15mΩ
Number1 N-channel
Input Capacitance(Ciss)3.525nF
TypeN-Channel

Technical details

650V 134A 2.8V 500W 15mΩ 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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