Bestirpower · FETs & Power MOSFETs · MPN BCD65N260Y1
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| Gate Charge(Qg) | 12.5nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 15.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.1V |
| Pd - Power Dissipation | 67W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 260mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 294pF |
| Type | N-Channel |
650V 15.5A 4.1V 67W 260mΩ 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS