Bestirpower BCBF65N95W1

Bestirpower · FETs & Power MOSFETs · MPN BCBF65N95W1

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)33nC
Current - Continuous Drain(Id)29A
Output Capacitance(Coss)49pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.2V
Pd - Power Dissipation125W
RDS(on)95mΩ
Reverse Transfer Capacitance (Crss@Vds)3pF
Number1 N-channel
Input Capacitance(Ciss)765pF
TypeN-Channel

Technical details

650V 29A 3.2V 125W 95mΩ 1 N-channel N-Channel TO-263-7L Single FETs, MOSFETs RoHS

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