Bestirpower BCBF65N25W1

Bestirpower · FETs & Power MOSFETs · MPN BCBF65N25W1

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)124nC
Output Capacitance(Coss)185pF
Current - Continuous Drain(Id)83.3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)10.1pF
RDS(on)25mΩ@18V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

650V 83.3A 2.6V 375W 25mΩ@18V 1 N-channel N-Channel TO-263-7L Single FETs, MOSFETs RoHS

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