Bestirpower BCBF170N650T1

Bestirpower · FETs & Power MOSFETs · MPN BCBF170N650T1

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Specifications

Gate Charge(Qg)13.2nC
Drain to Source Voltage1.7kV
Output Capacitance(Coss)17.1pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation78W
RDS(on)650mΩ
Reverse Transfer Capacitance (Crss@Vds)2.1pF
Number1 N-channel
Input Capacitance(Ciss)183pF
TypeN-Channel

Technical details

1.7kV 8A 2.8V 78W 650mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS

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