Bestirpower BCBF170N1000P1

Bestirpower · FETs & Power MOSFETs · MPN BCBF170N1000P1

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Specifications

Gate Charge(Qg)16.2nC
Drain to Source Voltage1.7kV
Output Capacitance(Coss)11.2pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.1V
Pd - Power Dissipation51W
Reverse Transfer Capacitance (Crss@Vds)1.8pF
RDS(on)1Ω@18V
Number1 N-channel
Input Capacitance(Ciss)182pF
TypeN-Channel

Technical details

1.7kV 5A 3.1V 51W 1Ω@18V 1 N-channel N-Channel TO-263-7L Single FETs, MOSFETs RoHS

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