Bestirpower BC25SG65SWS

Bestirpower · FETs & Power MOSFETs · MPN BC25SG65SWS

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)124nC
Output Capacitance(Coss)185pF
Current - Continuous Drain(Id)83.3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation375W
RDS(on)25mΩ
Reverse Transfer Capacitance (Crss@Vds)10.1pF
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

650V 83.3A 2.6V 375W 25mΩ 1 N-channel N-Channel SOT-227 Single FETs, MOSFETs RoHS

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