baocheng · FETs & Power MOSFETs · MPN SI2319A
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| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 85pF |
| Current - Continuous Drain(Id) | 4.4A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 95mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 470pF |
40V 4.4A 1.25W Surface Mount SOT-23