baocheng SI2308A

baocheng · FETs & Power MOSFETs · MPN SI2308A

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)10nC@10V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)50pF
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.25W
RDS(on)95mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)15pF
Number1 N-channel
Input Capacitance(Ciss)240pF
TypeN-Channel

Technical details

N-Channel 60V 3A 1.25W Surface Mount SOT-23

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