baocheng S8550

baocheng · Transistors (BJTs) · MPN S8550

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO25V
DC Current Gain350
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))600mV

Technical details

25V 350 1 NPN NPN 500mA SOT-23 Single Bipolar Transistors RoHS

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