baocheng · FETs & Power MOSFETs · MPN BCD80N06
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| Gate Charge(Qg) | 90nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 286pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 108W |
| Reverse Transfer Capacitance (Crss@Vds) | 257pF |
| RDS(on) | 7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.136nF |
N-Channel 60V 80A 108W Surface Mount TO-252-4R