baocheng BCD70N07A

baocheng · FETs & Power MOSFETs · MPN BCD70N07A

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Specifications

Gate Charge(Qg)35nC@0V
Drain to Source Voltage68V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation116W
RDS(on)8.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)231pF
Number1 N-channel
Input Capacitance(Ciss)4.062nF
TypeN-Channel

Technical details

N-Channel 68V 80A 116W Surface Mount TO-252-4R

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