baocheng · FETs & Power MOSFETs · MPN BCD50N06
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| Drain to Source Voltage | 60V |
|---|---|
| Output Capacitance(Coss) | 113pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 92pF |
| RDS(on) | 17mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.889nF |
| Type | N-Channel |
N-Channel 60V 50A 62.5W Surface Mount TO-252