ASDsemi · FETs & Power MOSFETs · MPN ASDM60R042NQ-R
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| Gate Charge(Qg) | 33.4nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 438pF |
| Current - Continuous Drain(Id) | 116A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 113W |
| RDS(on) | 5.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.625nF |
60V 116A 113W Surface Mount DFN5x6-8