ASDsemi ASDM540G-R

ASDsemi · FETs & Power MOSFETs · MPN ASDM540G-R

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)215pF
Current - Continuous Drain(Id)33A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation70W
RDS(on)35mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)195pF
Number1 N-channel
Input Capacitance(Ciss)2.3nF

Technical details

N-Channel 100V 33A 70W Surface Mount TO-263

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