ASDsemi ASDM4976S-R

ASDsemi · FETs & Power MOSFETs · MPN ASDM4976S-R

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)124pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)90mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)730pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 60V 5A 2W Surface Mount SOP-8

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