ASDsemi ASDM4606S-R

ASDsemi · FETs & Power MOSFETs · MPN ASDM4606S-R

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)108pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)21mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)648pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 8A 2.5W Surface Mount SOP-8

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