ASDsemi ASDM4100S-R

ASDsemi · FETs & Power MOSFETs · MPN ASDM4100S-R

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Specifications

Gate Charge(Qg)21nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)220pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)185mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)620pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 100V 5A 2.5W Surface Mount SOP-8

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