ASDsemi · FETs & Power MOSFETs · MPN ASDM40R009NQ-R
No reviews yet — be the first to review ASDsemi ASDM40R009NQ-R.
| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.418nF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 114W |
| RDS(on) | 1.4mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.4nF |
40V 200A 2V 114W 1.4mΩ@10V 1 N-channel DFN-5(4.9x5.9) Single FETs, MOSFETs RoHS