ASDsemi · FETs & Power MOSFETs · MPN ASDM40N40E-R
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 141pF |
| RDS(on) | 8.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.733nF |
N-Channel 40V 40A 65W DFN3.3x3.3-8