ASDsemi ASDM40N100P-T

ASDsemi · FETs & Power MOSFETs · MPN ASDM40N100P-T

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)29nC@10V
Output Capacitance(Coss)540pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation65W
Reverse Transfer Capacitance (Crss@Vds)162pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.424nF

Technical details

40V 100A 65W Through Hole TO-220

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