ASDsemi · FETs & Power MOSFETs · MPN ASDM30P30BE-R
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 315pF |
| RDS(on) | 10mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.757nF |
P-Channel 30V 30A 3.7W PDFN3.3x3.3-8