ASDsemi ASDM30P30BE-R

ASDsemi · FETs & Power MOSFETs · MPN ASDM30P30BE-R

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)30nC@10V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.7W
Reverse Transfer Capacitance (Crss@Vds)315pF
RDS(on)10mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.757nF

Technical details

P-Channel 30V 30A 3.7W PDFN3.3x3.3-8

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