ASDsemi · FETs & Power MOSFETs · MPN ASDM30P11TD-R
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| Gate Charge(Qg) | 61nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 400pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 31.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 309pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.482nF |
| Type | P-Channel |
P-Channel 30V 55A 31.2W Surface Mount DFN-8(3x3)