ASDsemi ASDM30P100KQ-R

ASDsemi · FETs & Power MOSFETs · MPN ASDM30P100KQ-R

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)742pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation109W
Reverse Transfer Capacitance (Crss@Vds)700pF
RDS(on)6mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.56nF
TypeP-Channel

Technical details

P-Channel 30V 100A 109W Surface Mount TO-252

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