ASDsemi ASDM30P09ZB-R

ASDsemi · FETs & Power MOSFETs · MPN ASDM30P09ZB-R

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Specifications

Configuration-
Gate Charge(Qg)50nC@1V
Drain to Source Voltage30V
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)20mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.3nF

Technical details

P-Channel 30V 6A 1.8W Surface Mount SOT-23-3

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