ASDsemi · FETs & Power MOSFETs · MPN ASDM30N55E-R
No reviews yet — be the first to review ASDsemi ASDM30N55E-R.
| Gate Charge(Qg) | 31.6nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 410pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 305pF |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.105nF |
N-Channel 30V 55A 40W DFN3.3x3.3-8