ASDsemi ASDM30DN40E-R

ASDsemi · FETs & Power MOSFETs · MPN ASDM30DN40E-R

No reviews yet — be the first to review ASDsemi ASDM30DN40E-R.

Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)18mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)830pF
TypeN-Channel

Technical details

N-Channel Array 30V 30A 20W Surface Mount PDFN3333-8

Related FETs & Power MOSFETs