ASDsemi · FETs & Power MOSFETs · MPN ASDM30DN30E-R
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| Gate Charge(Qg) | 9.82nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 126pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 26W |
| RDS(on) | 16mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 108pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 896pF |
| Type | N-Channel |
N-Channel Array 30V 30A 26W PDFN3.3x3.3-8