ASDsemi ASDM3010S-R

ASDsemi · FETs & Power MOSFETs · MPN ASDM3010S-R

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Specifications

Gate Charge(Qg)4.1nC
Drain to Source Voltage30V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)20mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)685pF
TypeN-Channel

Technical details

N-Channel Array 30V 6A 2.5W Surface Mount SOP-8

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