ASDsemi ASDM20P09ZB-R

ASDsemi · FETs & Power MOSFETs · MPN ASDM20P09ZB-R

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Specifications

Gate Charge(Qg)48nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)28mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)1.2nF
TypeP-Channel

Technical details

P-Channel 20V 6A 1.8W Surface Mount SOT-23-3

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