ASDsemi ASDM20N100Q-R

ASDsemi · FETs & Power MOSFETs · MPN ASDM20N100Q-R

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)2.47nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)325pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.384nF
TypeN-Channel

Technical details

N-Channel 20V 100A 83W Surface Mount DFN5x6-8

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